专利名称：Method for forming custom planar metal
bonding pad connectors for semiconductordice
发明人：Terry L. Gilton申请号：US08/225651申请日：19940411公开号：US05445994A公开日：19950829
摘要：A method for forming custom planar connections to the bonding pads of asemiconductor die is provided. The method includes the steps of: depositing a passivationlayer on the bonding pads; forming a patterning layer by depositing a dielectric materialsuch as TEOS on the passivation layer; etching through the patterning layer and
passivation layer to the bond pads using a first etch mask; etching a connector pattern inthe patterning layer using a second etch mask; depositing a metal layer over thepatterning layer; and then planarizing the metal layer to an endpoint of the patterninglayer to form planar metal connectors having a desired thickness.
申请人：MICRON TECHNOLOGY, INC.
代理人：Stephen A. Gratton
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