专利名称：Flash memory device and related erase
operation
发明人：Chi-Weon Yoon,Heung-Soo Lim申请号：US11501070申请日：20060809公开号：US07433244B2公开日：20081007
专利附图：
摘要：An erase operation for a flash memory device includes identifying a sectorgroup including a plurality of sectors based on an address, simultaneously pre-programming the sectors in the sector group, simultaneously erasing the sectors the
sector group, and simultaneously post-programming the sectors in the sector group.
申请人：Chi-Weon Yoon,Heung-Soo Lim
地址：Seoul KR,Yongin-si KR
国籍：KR,KR
代理机构：Volentine & Whitt, PLLC
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