MSB-BASED ERROR CORRECTION FOR FLASH MEMORY SYSTEM

专利名称：MSB-BASED ERROR CORRECTION FOR

FLASH MEMORY SYSTEM

发明人：Dong-Ku Kang,Seung-Jae Lee,Jun-Jin Kong申请号：US12169109申请日：20080708

公开号：US20090016103A1公开日：20090115

专利附图：

摘要：A flash memory system includes a multi-bit flash memory device having amemory cell array including memory cells arranged in rows and columns; a read circuitconfigured to read data from the memory cell array; and control logic configured to

control the read circuit so as to successively read data from a selected memory cell andadjacent memory cells to the selected memory cell in response to a request for a readoperation with respect to MSB data stored in the selected memory cell. A comparecircuit is configured to compare data read from the adjacent memory cells to theselected memory cell provided from the multi-bit flash memory device and to correctdata read from the selected memory cells based upon the comparison result.

申请人：Dong-Ku Kang,Seung-Jae Lee,Jun-Jin Kong

地址：Gyeonggi-do KR,Gyeonggi-do KR,Gyeonggi-do KR

国籍：KR,KR,KR

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