4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
PACKAGEH11A817 SERIES
H11AA814 SCHEMATIC14COLLECTOR423EMITTER1DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
The H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
H11A817 SCHEMATICANODE14COLLECTORFEATURES
•Compact 4-pin package
•Current transfer ratio in selected groups:
H11AA814: 20-300%H11A817: 50-600%H11AA814A: 50-150%H11A817A: 80-160%
H11A817B: 130-260%H11A817C: 200-400%H11A817D: 300-600%
CATHODE23EMITTERAPPLICATIONS
H11AA814 Series•AC line monitor
•Unknown polarity DC sensor•Telephone line interfaceH11A817 Series
•Power supply regulators•Digital logic inputs•Microprocessor inputs
© 2002 Fairchild Semiconductor Corporation
Page 1 of 85/30/02
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
Parameter
TOTAL DEVICEStorage TemperatureOperating TemperatureLead Solder Temperature
Total Device Power Dissipation (-55°C to 50 °C)EMITTER
Continuous Forward CurrentReverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps) LED Power Dissipation (25°C ambient)Derate above 25°CDETECTOR
Collector-Emitter VoltageEmitter-Collector VoltageContinuous Collector Current
Detector Power Dissipation (25°C ambient)Derate above 25°C
VCEOVECOICPD
AllAllAllAll
356501502.0
VVmAmWmW/°C
IFVRIF(pk)PD
All
H11A817, H11A817A,H11A817B, H11A817C,H11A817C, H11A817D
AllAll
5051.01001.33
mAVAmWmW/°C
TSTGTOPRTSOLPD
AllAllAllAll
-55 to +150-55 to +100260 for 10 sec
200
°C°C°CmW
Symbol
Device
H11A817 SERIES
Value
Units
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)INDIVIDUAL COMPONENT CHARACTERISTICS
ParameterEMITTER
(IF = 20 mA)
Input Forward Voltage
(IF = ±20 mA)(VR = 5.0 V)
IRVF
Test ConditionsSymbol
Device
H11A817, H11A17A,H11A817B, H11A817C,
H11A817D
H11AA814H11A817, H11A17A,
Reverse Leakage CurrentDETECTOR
Collector-Emitter Breakdown VoltageEmitter-Collector Breakdown VoltageCollector-Emitter Dark CurrentCollector-Emitter Capacitance
(IC = 1.0 mA, IF = 0)(IE = 100 µA, IF = 0)(VCE = 10V, IF = 0)(VCE = 0 V, f = 1 MHz)
BVCEOBVECOICEOCCE
ALLALLALLALL
356
10010.0258
100
VVnApF
H11A817B, H11A817C,
H11A817D
.001
10
µA
Min
Typ1.21.2
Max1.51.5
Unit
V
© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristic
Test Conditions
(IF = ±1 mA, VCE = 5 V) (note 1)(IF = ±1 mA, VCE = 5 V) (note 1)
Current Transfer Ratio
(IF = 5 mA, VCE = 5 V) (note 1)
CTRSymbolCTRCTR
DeviceH11AA814H11AA814AH11A817H11A817AH11A817BH11A817CH11A817D
Collector-EmitterSaturation VoltageAC CharacteristicRise TimeFall Time
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 1)(IC = 2 mA, VCE = 2 V, RL = 100V) (note 1)
TRTF
ALLALL
2.42.4
1818
µsµs
(IC = 1 mA, IF = ±20 mA)
VCE (SAT)
ALL
Min20505080130200300
.1Typ
Max300150600160260400600.2
Unit%%%%%%%V
ISOLATION CHARACTERISTICS
Characteristic
Input-Output Isolation Voltage (note 3)Isolation ResistanceIsolation Capacitance
Test Conditions (II-O [ 1 µA, 1 min.)(VI-O = 500 VDC)(VI-O = &, f = 1 MHz)
SymbolVISORISOCISO
Min53001011
0.5Typ
Max
UnitsVac(rms)
Ωpf
NOTES
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to Figure 8.
3. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
© 2002 Fairchild Semiconductor Corporation
Page 3 of 85/30/02
4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
CTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚CFig. 1 Normalized CTR vs. Forward Current1.4H11A817 SERIES
NORMALIZED CTRCTR NORMALIZED @ IF = 5 mA, VCE = 5 V, TA = 25˚CFig. 2 Normalized CTR vs. Ambient Temperature1.2IF = 10 mA1.211 NORMALIZED CTR0.8IF = 5 mA0.80.60.40.60.20051015202530IF - FORWARD CURRENT (mA)0.4-50-250+25+50+75+100TA - AMBIENT TEMPERATURE (˚C)Fig. 3 Collector-Emitter Saturation Voltagevs. Ambient Temperature.14IF = 20 mAIC = 1 mAFig. 4 Forward Voltage vs. Forward Current1.7VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V).12.1VF - FORWARD VOLTAGE (V)1.51.3T = 55˚C.08.06.041.1T = 25˚C0.9T = 100˚C.020.70-50-2502550751001250.50.10.20.51.02.05102050100IF - FORWARD CURRENT (mA)TA - AMBIENT TEMPERATURE (˚C)Fig. 5 Collector Current vs. Collector-Emitter Voltage25IC - COLLECTOR CURRENT (mA)IF = 20 mA2015IF = 10 mA105IF = 5 mAIF = 1 mA0012345678910VCE - COLLECTOR-EMITTER VOLTAGE (V)© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
Fig. 6 Collector Leakage Currentvs. Ambient TemperatureH11A817 SERIES
Fig. 7 Rise and Fall Timevs. Load ResistorICEO - COLLECTOR-EMITTER CURRENT (µA)10VCE = 10 V1000IF = 5 mAVCC = 5 VTA = 25˚CTr/ Tf- RISE AND FALL TIME (µs)1tofftf10-110010-21010-310-41trton10-510-602550751001250.10.1110100TA - AMBIENT TEMPERATURE (˚C)R - LOAD RESISTOR (KV)Figure 8. Switching Time Test Circuit and WaveformsTEST CIRCUITVCC = 10VWAVE FORMSINPUT PULSEIF INPUTICRL = 100ΩOUTPUT10%90%trtfOUTPUT PULSEAdjust IF to produce IC = 2 mARecommended Thermal Reflow Profile for Surface Mount DIP PackageTemperature (°C)250220°C: 10 sec to 40 sec200150100500012345Time (Min)225°CTime > 183°C: 120 sec to 180 sec© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
Package Dimensions (Through Hole)H11A817 SERIES
Package Dimensions (Surface Mount)0.270 (6.86)0.250 (6.35)0.270 (6.86)0.250 (6.35)SEATING PLANE0.190 (4.83)0.175 (4.45)SEATING PLANE0.270 (6.86)0.250 (6.35)0.190 (4.83)0.175 (4.45)0.300 (7.62)TYP0.200 (5.08)0.115 (2.92)0.200 (5.08)0.115 (2.92)0.070 (1.78)0.045 (1.14)0.154 (3.90)0.120 (3.05)0.020 (0.51)MIN0.016 (0.40)0.008 (0.20)0.300 (7.62)typ0.100 (2.54)TYP0.020 (0.51)MIN0.022 (0.56)0.016 (0.41)0.315 (8.00)MIN0.405 (10.30)MAX0.016 (0.40)0.008 (0.20)15°0.100 (2.54)TYPLead Coplanarity 0.004 (0.10) MAXPackage Dimensions (0.4” Lead Spacing)Footprint Dimensions (Surface Mount)0.070 (1.78)0.270 (6.86)0.250 (6.35)0.060 (1.52)SEATING PLANE0.190 (4.83)0.175 (4.45)0.200 (5.08)0.115 (2.92)0.270 (6.86)0.250 (6.35)0.100 (2.54)0.295 (7.49)0.415 (10.54)0.030 (0.76)0.154 (3.90)0.120 (3.05)0.004 (0.10)MIN0.400 (10.16)TYP0 to 15°0.016 (0.40)0.008 (0.20)0.100 (2.54)TYPNOTE
All dimensions are in inches (millimeters)
© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
ORDERING INFORMATION
OptionSSD W300300W3S3SD
Order Entry Identifier
.S.SD.W.300.300W.3S.3SD
Description
Surface Mount Lead BendSurface Mount; Tape and reel
0.4\" Lead Spacing
VDE 0884
VDE 0884, 0.4\" Lead SpacingVDE 0884, Surface MountVDE 0884, Surface Mount, Tape & Reel
H11A817 SERIES
Carrier Tape Specifications12.0 ± 0.15.00 ± 0.204.0 ± 0.10.30 ± 0.054.0 ± 0.1Ø1.55 ± 0.051.75 ± 0.107.5 ± 0.113.2 ± 0.216.0 ± 0.34.95 ± 0.200.1 MAX10.30 ± 0.20Ø1.6 ± 0.1User Direction of FeedNOTE
All dimensions are in millimeters
© 2002 Fairchild Semiconductor Corporation
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4-PIN PHOTOTRANSISTOR
OPTOCOUPLERS
H11AA814 SERIES
H11A817 SERIES
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1.Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or(b) support or sustain life, and (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected toresult in a significant injury of the user.
2.A critical component in any component of a life support
device or system whose failure to perform can bereasonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.
© 2002 Fairchild Semiconductor Corporation
Page 8 of 85/30/02
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