Integrated Circuit Devices Including A Capacitor

专利名称：Integrated Circuit Devices Including A

Capacitor

发明人：Byung-jun Oh,Kyung-tae Lee,Mu-kyeng Jung申请号：US11684865申请日：20070312

公开号：US20070145452A1公开日：20070628

专利附图：

摘要：Integrated circuit devices include an integrated circuit substrate and aconductive lower electrode layer of a capacitor on the integrated circuit substrate. Adielectric layer is on the lower electrode layer and a conductive upper electrode layer of

the capacitor is on the dielectric layer. A first intermetal dielectric layer is on the upperelectrode layer. The first intermetal dielectric layer includes at least one via holeextending to the upper electrode layer. A first conductive interconnection layer is on theat least one via hole of the first intermetal dielectric layer. A second intermetal dielectriclayer is on the first intermetal dielectric layer. The second intermetal dielectric layerincludes at least one via hole extending to the first conductive interconnection layer andat least partially exposing the at least one via hole of the first intermetal dielectric layer.A second conductive interconnection layer is provided in the at least one via hole of thesecond intermetal dielectric layer that electrically contacts the first conductiveinterconnection layer.

申请人：Byung-jun Oh,Kyung-tae Lee,Mu-kyeng Jung

地址：Yongin-city KR,Gwacheon-city KR,Suwon-city KR

国籍：KR,KR,KR

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