Charge pump circuit for high voltage generation

专利名称：Charge pump circuit for high voltage

generation

发明人：Jen-Shou Hsu申请号：US11656733申请日：20070123

公开号：US20080174360A1公开日：20080724

专利附图：

摘要：A circuit and method are given, to realize a high efficiency voltage multiplier forintegrated circuits generating an internal and flexible positive or negative high voltageon-chip supply voltage from low external positive or negative supply voltages or ground.

Applying multi-phase control signals to voltage boost internal nodes allows foreliminating threshold voltage drop losses and thus improves the voltage pumping gaincompared to circuits with diode-configured FETs of prior art. Making use of voltagesignals from antecedent stages in order to bias the bulk of MOS transistors fabricated intriple-well technology enables relaxing of the gate oxide stress within high order stageMOS transistors. Such a method, called leap-frog bulk potential tracking method, makesMOS transistors from different stages exhibit about the same body effect, which is veryimportant because MOS transistors of higher order stages now show the sameperformance as MOS transistors from lower order stages. Important also in terms ofefficiency as the charge sharing speed of high order MOS transistors always dominatesthe total charge pump performance and the driving force of pumped currents, thus alsoallowing for a greater number of serially connectable stages overall or a smaller numbernecessary for a certain targeted output voltage.

申请人：Jen-Shou Hsu

地址：Hsinchu City TW

国籍：TW

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