METHOD OF FORMING DIELECTRIC FILMS

专利名称：METHOD OF FORMING DIELECTRIC FILMS发明人：Hideo Kitagawa,Naomu Kitano申请号：US12342349申请日：20081223

公开号：US20090170340A1公开日：20090702

专利附图：

摘要：A method of forming dielectric films including a metal silicate on a siliconsubstrate comprises a first step of oxidizing a surface layer portion of the siliconsubstrate and forming a silicon dioxide film; a second step of irradiating ion on thesurface of the silicon dioxide film and making the surface layer portion of the silicondioxide film into a reaction-accelerating layer with Si—O cohesion cut; a third step oflaminating a metal film on the reaction-accelerating layer in a non-oxidizing atmosphere;and a fourth step of oxidizing the metal film and forming a metal silicate film thatdiffuses a metal from the metal film to the silicon dioxide film.

申请人：Hideo Kitagawa,Naomu Kitano

地址：Tottori-shi JP,Machida-shi JP

国籍：JP,JP

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