AP4936M

Advanced Power Electronics Corp.▼ Low Gate Charge

▼ Simple Drive Requirement▼ Fast Switching

SO-8

S1G1

G2S2

D1D1

D2

D2

N-CHANNEL ENHANCEMENT MODEPOWER MOSFET

BVDSSRDS(ON)ID

25V37mΩ5.8A

Description

D1D2The Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness.

G1S1G2S2Absolute Maximum Ratings

SymbolVDSVGS

ID@TA=25℃ID@TA=70℃IDM

PD@TA=25℃TSTGTJ

Parameter

Drain-Source VoltageGate-Source VoltageContinuous Drain Current3Continuous Drain Current3Pulsed Drain Current1Total Power DissipationLinear Derating FactorStorage Temperature Range

Operating Junction Temperature Range

Rating25± 205.84.63020.016-55 to 150-55 to 150

UnitsVVAAAW W/℃℃℃

Thermal Data

SymbolRthj-amb

Parameter

Thermal Resistance Junction-ambient3

Max.

Value62.5

Unit℃/W

Data and specifications subject to change without notice

20020305

AP4936M

Electrical Characteristics@Tj=25oC(unless otherwise specified)

SymbolBVDSS

ΔBVDSS/ΔTj

Parameter

Drain-Source Breakdown VoltageStatic Drain-Source On-Resistance2Gate Threshold VoltageForward Transconductance

Drain-Source Leakage Current (Tj=25oC)Drain-Source Leakage Current (Tj=70oC)

Test Conditions

VGS=0V, ID=250uAVGS=10V, ID=5AVGS=4.5V, ID=3.5AVDS=VGS, ID=250uAVDS=10V, ID=5AVDS=25V, VGS=0VVDS=20V ,VGS=0VVGS=± 20VID=5AVDS=16VVGS=5VVDS=16VID=5A

RG=3.3Ω,VGS=10VRD=3.2ΩVGS=0VVDS=25Vf=1.0MHz

Min.25---1--------------

Typ.-0.03---6.5---6.91.24.5617.514.55.521815563

Max.Units--37603-125±100----------VV/℃mΩmΩVSuAuAnAnCnCnCnsnsnsnspFpFpF

Breakdown Voltage Temperature CoefficientReference to 25℃, ID=1mA

RDS(ON)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrss

Gate-Source LeakageTotal Gate Charge2Gate-Source ChargeGate-Drain (\"Miller\") ChargeTurn-on Delay Time2Rise Time

Turn-off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer Capacitance

Source-Drain Diode

SymbolISVSD

Parameter

Continuous Source Current ( Body Diode )

Test Conditions

VD=VG=0V , VS=1.2VTj=25℃, IS=1.7A, VGS=0V

Min.--

Typ.--

Max.Units1.671.2

AV

Forward On Voltage2

Notes:

1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.

AP4936M

3025TC=25oC2510V8.0V6.0VID , Drain Current (A)TC=150oC2010V8.0V6.0V5.0VID , Drain Current (A)205.0V15151010VGS=4.0V55VGS=4.0V0012345600123456VDS , Drain-to-Source Voltage (V)VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

601.855ID=5.0ATC=25℃1.6ID=5AVGS=10V504540Normalized RDS(ON)345678910111.4RDS(ON) (mΩ)1.2351300.825200.6-50050100150VGS (V)Tj , Junction Temperature (oC) Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

AP4936M

72.5625ID , Drain Current (A)41.53PD (W)10.50255075100125150050100150210Tc , Case Temperature ( oC)Tc , Case Temperature ( C)o Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation

Case Temperature

1001Duty Factor = 0.5Normalized Thermal Response (Rthja)100.21ms10msID (A)10.10.10.050.020.01100ms1s0.1PDM0.01Single PulsetTDuty Factor = t/TPeak Tj = PDM x Rthja + TaRthja=135oC/W TC=25oCSingle Pulse0.010.111010sDC1000.0010.00010.0010.010.11101001000VDS (V)t , Pulse Width (S) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

AP4936M

161000f=1.0MHz14ID=5AVDS=16VVGS , Gate to Source Voltage (V)12Ciss10CossC (pF)1008Crss6420024681012141618101591317212529QG , Total Gate Charge (nC)VDS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics

1003102IS(A)Tj=150oCTj=25oCVGS(th) (V)101.31.5-5010.10.10.30.50.70.91.1050100150VSD (V)Tj , Junction Temperature ( C )o Fig 11. Forward Characteristic of

Reverse Diode

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

AP4936M

VDSRD90%DVDSTO THEOSCILLOSCOPE 0.64 x RATED VDSRGG+10 v-SVGS10%VGStd(on)trtd(off)tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform

VGVDSDTO THEOSCILLOSCOPEQG5VQGDGS+0.64 x RATED VDSQGSVGS1~ 3 mA-IGIDChargeQ Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform