FB180SA10资料

PD- 91651C

FB180SA10

HEXFET® Power MOSFET

Fully Isolated PackagelEasy to Use and Parallell Very Low On-ResistancelDynamic dv/dt RatinglFully Avalanche Rated

lSimple Drive RequirementslLow Drain to Case CapacitancelLow Internal Inductance

l

DVDSS = 100VRDS(on) = 0.0065WGID = 180ASDescription

Fifth Generation, high current density HEXFETS areparalled into a compact, high power module providingthe best combination of switching, ruggedized design,very low ON resistance and cost effectiveness.The isolated SOT-227 package is preferred for allcommercial - industrial applications at powerdissipation levels to approximately 500 watts. The lowthermal resistance and easy connection to the SOT-227 package contribute to its universal acceptancethroughout the industry.

SOT-227Absolute Maximum Ratings

Parameter

ID @ TC = 25°CID @ TC = 100°CIDM

PD @TC = 25°CVGSEASIAREARdv/dtTJTSTGVISO

Continuous Drain Current, VGS @ 10VContinuous Drain Current, VGS @ 10VPulsed Drain Current 󰂁Power DissipationLinear Derating FactorGate-to-Source Voltage

Single Pulse Avalanche Energy󰂂Avalanche Current󰂁

Repetitive Avalanche Energy󰂁Peak Diode Recovery dv/dt 󰂃Operating Junction and

Storage Temperature Range

Insulation Withstand Voltage (AC-RMS)Mounting torque, M4 srew

Max.

1801207204802.7 ± 20700180485.7

-55 to + 150

2.51.3

Units

AWW/°CVmJAmJV/ns°CkVN•m

Thermal Resistance

Parameter

RqJCRqCS

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Typ.

–––0.05

Max.

0.26–––

Units

°C/W

1www.irf.com

2/1/99

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FB180SA10

元器件交易网www.cecb2b.com

FB180SA10

元器件交易网www.cecb2b.com

FB180SA10

元器件交易网www.cecb2b.com

FB180SA10

元器件交易网www.cecb2b.com

FB180SA10

元器件交易网www.cecb2b.com

FB180SA10

元器件交易网www.cecb2b.com

FB180SA10