VLZ-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• • •• • • •
Very sharp reverse characteristicLow reverse current level
e2Very high stability
LownoiseHigh reliability
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/ECand WEEE 2002/96/EC
9612009
Applications
•Voltage stabilization
Mechanical Data
Case: QuadroMELF glass case SOD80Weight: approx. 34 mg
Cathode band color: black Packaging codes/options:
GS18/10 k per 13\" reel (8 mm tape), 10 k/boxGS08/2.5 k per 7\" reel (8 mm tape), 12.5 k/box
Absolute Maximum Ratings
Tamb = 25°C, unless otherwise specified
Parameter
Power dissipationZ-current
Junction temperatureStorage temperature range
Test conditionRthJA ≤ 300 K/W
SymbolPtotIZTjTstg
Value500Ptot/VZ175- 65 to + 175
UnitmWmA°C°C
Thermal Characteristics
Tamb = 25°C, unless otherwise specified
ParameterJunction to ambient air
Test condition
on PC board 50 mm x 50 mm x 1.6 mm
SymbolRthJA
Value500
UnitK/W
Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Forward voltage
Test conditionIF = 200 mA
SymbolVF
Min
Typ.
Max1.5
UnitV
Document Number 81759Rev. 1.0, 15-Aug-07
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VLZ-Series
Vishay Semiconductors
Electrical Characteristics
Zener Voltage
Part-number-groupVLZ2V4VLZ2V7VLZ3V0VLZ3V3VLZ3V6VLZ3V9
Part-numberVLZ2V4AVLZ2V4BVLZ2V7AVLZ2V7BVLZ3V0AVLZ3V0BVLZ3V3AVLZ3V3BVLZ3V6AVLZ3V6BVLZ3V9AVLZ3V9BVLZ4V3A
VLZ4V3
VLZ4V3BVLZ4V3CVLZ4V7A
VLZ4V7
VLZ4V7BVLZ4V7CVLZ5V1A
VLZ5V1
VLZ5V1BVLZ5V1CVLZ5V6A
VLZ5V6
VLZ5V6BVLZ5V6CVLZ6V2A
VLZ6V2
VLZ6V2BVLZ6V2CVLZ6V8A
VLZ6V8
VLZ6V8BVLZ6V8CVLZ7V5A
VLZ7V5
VLZ7V5BVLZ7V5CVLZ8V2A
VLZ8V2
VLZ8V2BVLZ8V2CVLZ9V1A
VLZ9V1
VLZ9V1BVLZ9V1CVLZ10A
VLZ10
VLZ10BVLZ10CVLZ10DVLZ11A
VLZ11
VLZ11BVLZ11C
VZ at IZTVmin2.332.432.542.692.853.013.163.323.4553.63.743.894.044.174.34.444.554.684.814.945.095.285.455.615.785.966.126.296.496.666.857.077.297.537.788.038.298.578.839.129.419.79.9410.1810.510.82
Vmax2.522.632.752.913.073.223.383.533.6953.8454.014.164.294.434.574.684.84.935.075.25.375.555.735.916.096.276.446.636.837.017.227.457.677.928.198.458.739.019.39.599.910.210.4410.7111.0511.38
Dynamic ResistanceZZ at IZT
Ωmax10010010010080807070606050504040402525252020201313131010108888888888888888101010
ZZK at IZK
Ωmax200020001000100010001000100010001000100010001000100010001000900900900800800800500500500300300300150150150120120120120120120120120120120120120120120120120
20202020202020202020202020202020202020202020202020202020202020202020202020202020202020101010
1111111111111111111111111110.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.5
Test CurrentIZTmA
IZKmA
µAmax7070505050101010553333310632221113332223337.57.57.50.040.040.040.040.040.040.040.040.040.04
1111111111111112222222224444446.56.736.937.157.397.637.888.148.398.668.949.229.449.679.9810.28
Reverse Leakage Current
IR at VR
V
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Document Number 81759
Rev. 1.0, 15-Aug-07
元器件交易网www.cecb2b.com
VLZ-Series
Vishay Semiconductors
Zener Voltage
Part-number-group
Part-numberVLZ12A
VLZ12
VLZ12BVLZ12CVLZ13A
VLZ13
VLZ13BVLZ13CVLZ15A
VLZ15
VLZ15BVLZ15CVLZ16A
VLZ16
VLZ16BVLZ16CVLZ18A
VLZ18
VLZ18BVLZ18CVLZ20A
VLZ20
VLZ20BVLZ20CVLZ20DVLZ22A
VLZ22
VLZ22BVLZ22CVLZ22DVLZ24A
VLZ24
VLZ24BVLZ24CVLZ24DVLZ27A
VLZ27
VLZ27BVLZ27CVLZ27DVLZ30A
VLZ30
VLZ30BVLZ30CVLZ30DVLZ33A
VLZ33
VLZ33BVLZ33CVLZ33DVLZ36A
VLZ36
VLZ36BVLZ36CVLZ36D
VZ at IZTVmin11.1311.4411.7412.1112.5512.9913.4413.8914.3514.815.2515.6916.2216.8217.4218.0218.6319.2319.7220.1520.6421.0821.5222.0522.6123.1223.6324.2624.9725.6326.2926.9927.728.3629.0229.6830.3230.931.4932.1432.7933.434.01
Vmax11.7112.0312.3512.7513.2113.6614.1314.6215.0915.5716.0416.5117.0617.718.3318.9619.5920.2220.7221.221.7122.1722.6323.1823.7724.3124.8525.5226.2626.9527.6428.3929.1329.8230.5131.2231.8832.533.1133.7934.4935.1335.77
Dynamic ResistanceZZ at IZT
Ωmax12121214141416161618181823232328282828303030303535353545454545555555556565656575757575
ZZK at IZK
Ωmax110110110110110110110110110150150150150150150200200200200200200200200200200200200250250250250250250250250250250250250250250250250
10101010101010101010101010101010101010555555555555555555555555
0.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.50.5
Test CurrentIZTmA
IZKmA
µAmax0.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.040.04
10.610.911.211.511.912.312.813.213.614.114.514.915.41616.517.117.718.318.719.119.62020.420.921.52222.42323.724.32525.626.326.927.628.228.829.429.930.531.231.732.3
Reverse Leakage Current
IR at VR
V
Document Number 81759Rev. 1.0, 15-Aug-07
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VLZ-Series
Vishay Semiconductors
Zener Voltage
Part-number-group
Part-numberVLZ39AVLZ39BVLZ39C
VLZ39
VLZ39DVLZ39EVLZ39FVLZ39G
VLZ43VLZ47VLZ51VLZ56
VLZ43VLZ47VLZ51VLZ56
VZ at IZTVmin34.6835.363636.6337.3638.1438.9440444853
Vmax36.4737.1937.8538.5239.2940.1140.845495460
Dynamic ResistanceZZ at IZT
Ωmax858585858585859090100100
ZZK at IZK
Ωmax250250250250250250250----55555555555
0.50.50.50.50.50.50.5----Test CurrentIZTmA
IZKmA
µAmax0.040.040.040.040.040.040.040.040.040.040.04
32.933.634.234.835.536.2373841.845.650.4
Reverse Leakage Current
IR at VR
V
Typical Characteristics
Tamb = 25°C, unless otherwise specified
60050040030020010000
VZtn - Relative Voltage Change1.3
VZtn = VZt/VZ (25 °C)Ptot - Total Power Dissipation (mW)1.21.11.00.90.8- 60
TKVZ = 10 x 10-4/K8 x 10-4/K6 x 10-4/K4 x 10-4/K2 x 10-4/K0- 2 x 10-4/K- 4 x 10-4/K95 9602
8012016020040
Tamb - Ambient Temperature (°C)
95 9599
60120180240Tj - Junction Temperature (°C)0Figure1. Total Power Dissipation vs. Ambient Temperature
Figure3. Typical Change of Working Voltage vs.
Junction Temperature
1000VZ - Voltage Change (mV)TKVZ - Temperature Coefficient of VZ (10-4/K)15Tj = 25 °C101005
IZ = 5 mAIZ = 5 mA100
195 95980510152025- 50
95 9600
10
VZ - Z-Voltage (V)204030
VZ - Z-Voltage (V)
50
Figure2. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25°C
Figure4. Temperature Coefficient of Vz vs. Z-Voltage
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Document Number 81759
Rev. 1.0, 15-Aug-07
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VLZ-Series
Vishay Semiconductors
200CD - Diode Capacitance (pF)5040VR = 2 VIZ - Z-Current (mA)150Tj = 25 °CPtot = 500 mWTamb = 25 °C302010015100500095 960151015202520253035VZ - Z-Voltage (V)95 9607VZ - Z-Voltage (V)Figure5. Diode Capacitance vs. Z-VoltageFigure8. Z-Current vs. Z-Voltage
10010
1Tj = 25 °C1000rZ - Differential Z-Resistance (Ω)IF - Forward Current (mA)IZ = 1 mA100
5 mA0.10.010.0010
1010 mA1
Tj = 25 °C0.20.40.60.81.0
95 9606
051015202595 9605
VF - Forward Voltage (V)VZ - Z-Voltage (V)
Figure6. Forward Current vs. Forward VoltageFigure9. Differential Z-Resistance vs. Z-Voltage
10080IZ - Z-Current (mA)60402000
95 9604
Ptot = 500 mWTamb = 25 °C4
1268
VZ - Z-Voltage (V)
20Figure7. Z-Current vs. Z-Voltage
Document Number 81759Rev. 1.0, 15-Aug-07
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VLZ-Series
Vishay Semiconductors
Zthp - Thermal Resistance for Pulse Cond. (KW)1000 tP/T = 0.5 100 tP/T = 0.2Single Pulse10 tP/T = 0.1tP/T = 0.02iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj)100
101
tP - Pulse Length (ms)
102
95 9603
tP/T = 0.01tP/T = 0.05RthJA = 300 K/WT = Tjmax - Tamb1 10-1
Figure10. Thermal Response
Package Dimensions in millimeters (inches): QuadroMELF SOD80
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Document Number 81759
Rev. 1.0, 15-Aug-07
元器件交易网www.cecb2b.com
VLZ-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well astheir impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which areknown as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSsand forbid their use within the next ten years. Various national and international initiatives are pressing for anearlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the useof ODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81759Rev. 1.0, 15-Aug-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000Revision: 18-Jul-08
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