专利名称：Method of fabricating thin film transistor发明人：Tae Woo Lee,Young Hun Byun,Yi Yeol
Lyu,Sang Yoon Lee,Bon Won Koo
申请号：US11972847申请日：20080111公开号：US07834352B2公开日：20101116
专利附图：
摘要：A method of fabricating a thin film transistor, in which source and drainelectrodes are formed through a solution process, even all stages which include
formation of electrodes on a substrate, formation of an insulator layer, and formation of
an organic semiconductor layer are conducted through the solution process. In themethod, the fabrication is simplified and a fabrication cost is reduced. It is possible toapply the organic thin film transistor to integrated circuits requiring high speed switchingbecause of high charge mobility.
申请人：Tae Woo Lee,Young Hun Byun,Yi Yeol Lyu,Sang Yoon Lee,Bon Won Koo
地址：Seoul KR,Gyeonggi-do KR,Daejeon-si KR,Seoul KR,Gyeoggi-do KR
国籍：KR,KR,KR,KR,KR
代理机构：Harness, Dickey & Pierce, P.L.C.
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