Fin field-effect-transistor (FET) structure and ma

专利名称：Fin field-effect-transistor (FET) structure and

manufacturing method

发明人：Mieno Fumitake申请号：US13686300申请日：20121127公开号：US08748247B2公开日：20140610

专利附图：

摘要：A method for fabricating a semiconductor structure includes providing asemiconductor substrate having a first region and a second region, and doping top of thesemiconductor substrate to form a doped layer at top surface of the semiconductor

substrate over the first region and the second region. The method also includes etchingthe doped layer to form a first sub-fin in the first region and a first sub-fin in the secondregion, and forming an insulating layer over the semiconductor substrate including thefirst sub-fin in the first region and the first sub-fin in the second region. Further, themethod includes removing top portions of the first sub-fin in the first region and the firstsub-fin in the second region and forming corresponding second sub-fins.

申请人：Mieno Fumitake

地址：Shanghai CN

国籍：CN

代理机构：Anova Law Group, PLLC

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