Manufacturing method of a thin film transistor and

专利名称：Manufacturing method of a thin film

transistor and pixel unit thereof

发明人：Xiaojun Yu,Peng Wei,Zihong Liu申请号：US14757934申请日：20151223公开号：US09583519B2公开日：20170228

专利附图：

摘要：The present invention provides a method of manufacturing a thin film transistorpixel unit, comprising: forming a metal oxide layer, a gate insulating layer, a gate metallayer and an etching barrier layer on a substrate, wherein the metal oxide layer is in a thinfilm transistor region; through a same mask, etching a part of the etching barrier layer,the gate metal layer and the gate insulating layer on the substrate for forming a gateregion, source and drain regions for forming contact vias, a gate interface region, and astorage capacitor region, respectively. Through additional steps including etching,metallizing, and filling, a source contact via is formed in the source region, a drain contactvia is formed in the drain region, and a connecting contact via is formed in the gateinterface region, respectively.

申请人：SHENZHEN ROYOLE TECHNOLOGIES CO. LTD.

地址：Shenzhen CN

国籍：CN

代理机构：Morgan, Lewis & Bockius LLP

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