专利名称：BIPOLAR TRANSISTOR WITH HIGH
BREAKDOWN VOLTAGE
发明人：Xin Lin,Daniel J. Blomberg,Jiang-Kai Zuo申请号：US13545746申请日：20120710
公开号：US20140015090A1公开日：20140116
专利附图：
摘要：A higher breakdown voltage transistor has separated emitter, base contact, andcollector contact. Underlying the emitter and the base contact are, respectively, first andsecond base portions of a first conductivity type. Underlying and coupled to the collector
contact is a collector region of a second, opposite, conductivity type, having a centralportion extending laterally toward, underneath, or beyond the base contact and
separated therefrom by the second base portion. A floating collector region of the sameconductivity type as the collector region underlies and is separated from the emitter bythe first base portion. The collector and floating collector regions are separated by apart of the semiconductor (SC) region in which the base is formed. A further part of theSC region in which the base is formed, laterally bounds or encloses the collector region.
申请人：Xin Lin,Daniel J. Blomberg,Jiang-Kai Zuo
地址：Phoenix AZ US,Chandler AZ US,Chandler AZ US
国籍：US,US,US
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