Method for manufacturing interconnect structure

专利名称：Method for manufacturing interconnect

structure

发明人：Meng-Tse Chen,Hsiu-Jen Lin,Chih-Wei

Lin,Ming-Da Cheng,Chih-Hang Tung,Chung-Shi Liu

申请号：US15878195申请日：20180123公开号：US11121104B2公开日：20210914

专利附图：

摘要：A conductive interconnect structure includes a contact pad; a conductive body

connected to the contact pad at a first end; and a conductive layer positioned on asecond end of the conductive body. The conductive body has a longitudinal directionperpendicular to a surface of the contact pad. The conductive body has an average grainsize (a) on a cross sectional plane (Plane A) whose normal is perpendicular to thelongitudinal direction of the conductive body. The conductive layer has an average grainsize (b) on Plane A. The conductive body and the conductive layer are composed of samematerial, and the average grain size (a) is greater than the average grain size (b).

申请人：TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

地址：Hsinchu TW

国籍：TW

代理机构：WPAT, P.C.

代理人：Anthony King

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