专利名称：DEPOSITION APPARATUS
发明人：SHI, Xu,FULTON, Michael,FLYNN, David,
Ian,TAY, Beng, Kang,TAN, Hong, Siang
申请号：EP96903120.2申请日：19960220公开号：EP0811237B1公开日：20000913
摘要：Deposition apparatus incorporating either a single or multiple filtered cathodicarc (FCA) source for depositing coatings such as tetrahedral amorphous carbon (TAC);metal oxides; compounds and alloys of such materials onto various types of substrates,such as metal semiconductors, plastic ceramics and glasses. Substrates are movedthrough the plasma beam(s) of the FCA source(s) and beam scanning increases depositionarea. Macroparticles are filtered by a double bend filter duct.
申请人：FILPLAS VACUUM TECHNOLOGY PTE
地址：SG
国籍：SG
代理机构：Schlich, George William
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