专利名称：LDMOS device having a low angle sloped
oxide
发明人：Sagy Levy,Sharon Levin,David Mistele申请号：US15201460申请日：20160703公开号：US09812566B1公开日：20171107
专利附图：
摘要：A laterally diffused metal oxide semiconductor (LDMOS) device that mayinclude an oxide region that comprises a bottom surface; a drain that is positionedbetween a left drift region and a right drift region and below the bottom surface;
wherein the oxide region further comprises a first sloped surface and a second slopedsurface; wherein a first angle between the first sloped surface and the bottom surfacedoes not exceed twenty degrees; and wherein a second angle between the secondsloped surface and the bottom surface of the oxide region does not exceed twentydegrees.
申请人：Tower Semiconductor Ltd.
地址：Midgal Haemek IL
国籍：IL
代理机构：Reches Patents
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