专利名称：DETECTING EFFECT OF CORRUPTING EVENT
ON PRELOADED DATA IN NON-VOLATILEMEMORY
发明人：SEUNGJUNE JEON,IDAN ALROD,QING
LI,XIAOYU YANG
申请号：US13796841申请日：20130312
公开号：US20140281750A1公开日：20140918
专利附图：
摘要：A method includes determining a read threshold voltage corresponding to a
group of storage elements in a non-volatile memory of a data storage device. Themethod also includes determining an error metric corresponding to data read from thegroup of storage elements using the read threshold voltage. The method includescomparing the read threshold voltage and the error metric to one or more criteriacorresponding to a corrupting event.
申请人：SANDISK TECHNOLOGIES INC.
地址：Plano TX US
国籍：US
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