Semiconductor device with polycrystalline silicon

专利名称：Semiconductor device with polycrystalline

silicon film

发明人：Masamichi Suzuki,Yusuke Higashi,Riichiro

Takaishi,Mitsuhiro Tomita,KiwamuSakuma,Yuichiro Mitani

申请号：US14792879申请日：20150707公开号：US09530855B2公开日：20161227

专利附图：

摘要：This semiconductor device comprises: a gate insulating film provided on a

surface of a channel layer; a gate electrode provided on an upper surface of the gateinsulating film; and a diffusion layer provided in the channel layer. Furthermore, thissemiconductor device comprises: a polycrystalline silicon film provided so as to cover asurface of the gate electrode and the diffusion layer; and an inter-layer insulating filmprovided so as to cover the gate electrode and the polycrystalline silicon film.

申请人：KABUSHIKI KAISHA TOSHIBA

地址：Minato-ku, Tokyo JP

国籍：JP

代理机构：Finnegan, Henderson, Farabow, Garrett & Dunner LLP

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