专利名称：METHOD FOR PRODUCING SILICON SINGLE
CRYSTAL HAVING NO FLAW
发明人：NAKAMURA, KOZO,SAISHOJI,
TOSHIAKI,TOGAWA, SHINJI,KOTOOKA,TOSHIROU,MAEDA, SUSUMU
申请号：EP01912484申请日：20010319公开号：EP1270769A4公开日：20051109
摘要：A method for producing a silicon ingot having no defect over a wide range ofregion with stability and good reproducibility, wherein when a silicon single crystal (11) ispulled up form a silicon melt (13), the shape of a solid-liquid interface (14) which aboundary between the silicon melt (13) and the silicon single crystal (11) and thetemperature distribution on the side face (11b) of a single crystal under being pulled upare appropriately controlled.
申请人：KOMATSU DENSHI KINZOKU KABUSHIKI KAISHA
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