专利名称：METHOD OF MANUFACTURING AN
INSULATING FILM CONTAINING HAFNIUM
发明人：Masaharu OSHIMA,Haruhiko
TAKAHASHI,Koji USUDA,Ziyuan LIU,Liu GUO-LIN,Kazuto IKEDA,Masaki YOSHIMARU
申请号：US12146835申请日：20080626
公开号：US20090004886A1公开日：20090101
专利附图：
摘要：A stacked film has an insulating film containing hafnium formed above a silicon
layer and a polysilicon layer formed on the insulating film. The stacked film is heated inan atmosphere containing oxygen and nitrogen and having the total pressureapproximately equal to a partial pressure of the nitrogen.
申请人：Masaharu OSHIMA,Haruhiko TAKAHASHI,Koji USUDA,Ziyuan LIU,Liu GUO-LIN,Kazuto IKEDA,Masaki YOSHIMARU
地址：Tokyo JP,Tokyo JP,Yokohama-shi JP,Kawasaki-shi JP,Higashiyamato-shi JP,Ome-shi JP,Hachioji-shi JP
国籍：JP,JP,JP,JP,JP,JP,JP
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