CMP SLURRY AND METHOD FOR POLISHING SEMICONDUCTOR

专利名称：CMP SLURRY AND METHOD FOR

POLISHING SEMICONDUCTOR WAFERUSING THE SAME

发明人：CHO, Seung-Beom,KIM, Jong-Pil,NHO, Jun-Seok,OH, Myoung-Hwan,KIM, Jang-Yul

申请号：EP07701029.6申请日：20070119公开号：EP1994112A1公开日：20081126

摘要：Disclosed is a CMP slurry in which a compound having a weight-averagemolecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group(COOH), or both, is added to a CMP slurry comprising abrasive particles and water andhaving a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a

semiconductor wafer using the CMP slurry. According to the disclosed invention, theagglomerated particle size of abrasive particles in the CMP slurry can be reduced, whilethe viscosity of the CMP slurry can be reduced and the global planarity of wafers uponpolishing can be improved. Thus, the CMP slurry can be advantageously used inprocesses for manufacturing semiconductor devices requiring fine patterns and canimprove the reliability and production of semiconductor devices through the use thereofin semiconductor processes.

申请人：LG Chem, Ltd.

地址：20, Yoido-dong Youngdungpo-gu, Seoul 150-721 KR

国籍：KR

代理机构：Goddar, Heinz J.

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